:: International Transaction Journal of Engineering, Management, & Applied Sciences & Technologies
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ISSN 2228-9860
eISSN 1906-9642
CODEN: ITJEA8
FEATURE PEER-REVIEWED ARTICLE
Vol.12(3) (2021) |
Oxide Variability Analysis Exploiting Greens Function Simulations
Ahsin Murtaza Bughio (Department of Electronic Engineering, QUEST, Nawabshah-Campus, PAKISTAN),
Junaid Iqbal (Department of Mechanical Engineering, QUEST, Larkana-Campus, PAKISTAN),
Khalil Muhammad Zuhaib (Department of Electronic Engineering, QUEST, Larkana-Campus, PAKISTAN),
Umair Ali Khan (Computer Systems Engineering Department, QUEST, Nawabshah, PAKISTAN),
Nasreen Nizamani (Department of Electronic Engineering, QUEST, Nawabshah-Campus, PAKISTAN).
Disciplinary: Electronics Engineering and Tehnology, Physics.
doi: 10.14456/ITJEMAST.2021.34
Keywords: FinFET variability; Solid State Electronics; Greens function; Modeling and simulations; Process variations; Nano-electronic devices; Physics based simulations.
AbstractAggressive downscaling of MosFET devices has some limitation due to short channel effects. These short channel effects affect the electronic behavior of device adversely. FinFET was proposed to overcome this shortcoming of MosFETs. But like MosFETs, FinFET have a problem of variability, which becomes more and more effective with the scaling. Variability analysis was the main theme of this research. Oxide thickness variations were taken into account for this research. 5%, 10% and 25% of variations were applied to oxide thickness and results were obtained for drain current, leakage current and threshold voltage. Synopsys Sentaurus as well as in-house simulator (Green's function simulation) were used for variability analysis.Paper ID: 12A3A
Cite this article:
Bughio, A. M., Iqbal, J., Zuhaib, Khan, U. A., Nizamani, N. (2021). Oxide Variability Analysis Exploiting Greens Function Simulations. International Transaction Journal of Engineering, Management, & Applied Sciences & Technologies, 12(3), 12A3A, 1-7. http://doi.org/10.14456/ITJEMAST.2021.43
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Other issues:
Vol.12(2)(2021)
Vol.12(1)(2021)
Vol.11(16)(2020)
Vol.11(15)(2020)
Vol.11(14)(2020)
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